 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| (R) STGD3NB60SD N-CHANNEL 3A - 600V DPAK Power MESHTM IGBT PRELIMINARY DATA TYPE STGD3NB60SD s VCES 600 V V CE(sat) < 1.5 V IC 3A s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT INTEGRATED FREEWHEELING DIODE SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 1 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS GAS DISCHARGE LAMP s STATIC RELAYS s MOTOR CONTROL s DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V GE IC IC ICM (*) P tot T stg Tj Parameter Collector-Emitter Voltage (V GS = 0) Gate-Emitter Voltage Collector Current (continuous) at T c = 25 C Collector Current (continuous) at T c = 100 C Collector Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 600 20 6 3 25 48 0.32 -65 to 175 175 Unit V V A A A W W/ o C o o C C (*) Pulse width limited by safe operating area March 2000 1/8 STGD3NB60SD THERMAL DATA R thj-case R thj-amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max Typ 3.125 100 1.5 o o C/W C/W o C/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbol V BR(CES) I CES IGES Parameter Collector-Emitter Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (V CE = 0) Test Conditions I C = 250 A V GE = 0 T j = 25 o C T j = 125 o C V CE = 0 Min. 600 10 100 100 Typ. Max. Unit V A A nA V CE = Max Rating V CE = Max Rating V GE = 20 V ON () Symbol V GE(th) V CE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage V CE = V GE V GE = 15 V V GE = 15 V V GE = 15 V Test Conditions I C = 250 A I C = 1.5 A IC = 3 A IC = 3 A T j = 125 o C Min. 2.5 1 1.2 1.1 Typ. Max. 5 Unit V V V V 1.5 DYNAMIC Symbol gf s C ies C oes C res QG Q GE Q GC I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current Test Conditions V CE =25 V V CE = 25 V IC = 3 A f = 1 MHz V GE = 0 Min. 1.7 Typ. 2.5 255 30 5.6 18 5.4 5.5 12 330 40 7 Max. Unit S pF pF pF nC nC nC A V CE = 480 V IC = 3 A V GE = 15 V V clamp = 480 V T j = 150 o C R G =1k SWITCHING ON Symbol t d(on) tr (di/dt) on E on Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions V CC = 480 V V GE = 15 V V CC = 480 V R G = 1k T j = 125 o C IC = 3 A R G = 1k IC = 3 A V GE = 15 V Min. Typ. 125 150 50 1100 Max. Unit ns ns A/s J 2/8 STGD3NB60SD ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol tc t r (v off ) td (of f ) tf E off (**) tc t r (v off ) td (of f ) tf E off (**) Parameter Test Conditions IC = 3 A V GE = 15 V Min. Typ. 1.8 1.0 3.4 0.72 1.15 2.8 1.45 3.6 1.2 1.8 Max. Unit s s s s mJ s s s s mJ V CC = 480 V Cross-Over Time Off Voltage Rise Time R GE = 1 k Delay Time Fall Time Turn-off Switching Loss V CC = 480 V Cross-Over Time Off Voltage Rise Time R GE = 1k Delay Time T j = 125 o C Fall Time Turn-off Switching Loss IC = 3 A V GE = 15 V COLLECTOR-EMITTER DIODE Symbol If I fm Vf t rr Q rr I rrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 3 A If = 1 A If = 3 A dI/dt = 100 A/S V R =200 V T j = 125 o C 1.55 1.15 1700 4500 9.5 Test Conditions Min. Typ. Max. 3 25 1.9 Unit A A V V ns nC A (*) Pulse width limited by max. junction temperature () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization) Thermal Impedance 3/8 STGD3NB60SD Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/8 STGD3NB60SD Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Off Switching Losses vs Ic Off Switching Losses vs Tj Switching Off Safe Operatin Area 5/8 STGD3NB60SD Diode Forward vs Tj Diode Forward Voltage Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching Fig. 3: Switching Waveforms 6/8 STGD3NB60SD TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 DIM. H A C2 C DETAIL "A" A1 L2 D DETAIL "A" B = = 3 B2 = = G E 2 L4 1 = = A2 0068772-B 7/8 STGD3NB60SD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8 http://www.st.com . |
Price & Availability of STGD3NB60SD
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |